In this thesis, the fabrication and characterization of thin-film electronic devices, including, Resistance Temperature Detectors (RTDs), thermistors, and Thin-Film Transistors (TFTs), are presented. The devices were realized on transparent ceramic substrates, specifically Alumina Ribbon Ceramic (ARC), which combines optical transparency with mechanical robustness, making it a promising platform for advanced thin-film electronics. The fabrication processes were based on vacuum deposition techniques, namely sputtering, allowing controlled deposition of metallic and semiconducting thin films at low temperatures. RTDs were fabricated using metallic conductive layers, while thermistors were realized by combining metallic contact electrodes with Indium Gallium Zinc Oxide (IGZO), acting as semiconductive layer. TFT devices were also fabricated to investigate the feasibility of integrating more complex electronic components on transparent ceramic substrates. The electrical characterization was focused on evaluating the performance of the devices as a function of temperature and mechanical bending. Temperature-dependent measurements were carried out to assess the sensitivity, stability, and repeatability of the sensors over single and multiple thermal cycles. Bending tests were performed to study the electrical response of the devices under mechanical deformation, demonstrating the potential of ARC substrates for flexible and robust electronic applications.

Fabrication and characterization of Thin-Film Electronics on Flexible Ceramic Substrates

DALLARI, GIULIA
2024/2025

Abstract

In this thesis, the fabrication and characterization of thin-film electronic devices, including, Resistance Temperature Detectors (RTDs), thermistors, and Thin-Film Transistors (TFTs), are presented. The devices were realized on transparent ceramic substrates, specifically Alumina Ribbon Ceramic (ARC), which combines optical transparency with mechanical robustness, making it a promising platform for advanced thin-film electronics. The fabrication processes were based on vacuum deposition techniques, namely sputtering, allowing controlled deposition of metallic and semiconducting thin films at low temperatures. RTDs were fabricated using metallic conductive layers, while thermistors were realized by combining metallic contact electrodes with Indium Gallium Zinc Oxide (IGZO), acting as semiconductive layer. TFT devices were also fabricated to investigate the feasibility of integrating more complex electronic components on transparent ceramic substrates. The electrical characterization was focused on evaluating the performance of the devices as a function of temperature and mechanical bending. Temperature-dependent measurements were carried out to assess the sensitivity, stability, and repeatability of the sensors over single and multiple thermal cycles. Bending tests were performed to study the electrical response of the devices under mechanical deformation, demonstrating the potential of ARC substrates for flexible and robust electronic applications.
2024
RTD
thermistor
TFT
ARC
trasparent substrate
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14251/5021